| 세션명 | 대학원생 구두발표 (II) |
|---|---|
| 발표장 | 제11-1회장 |
| 논문코드 | O11-1 |
| 발표일 | 2024-04-3 |
| 발표시간 | 13:00-13:15 |
| 논문제목 | Development of Bias-Stress-Stable Thin-Film Transistors via Sol-gel Quaternary High-k Oxide Dielectrics |
| 발표자 | 백석현 |
| 발표자 소속 | 아주대학교 |
| 저자 | 백석현, 박성준†, 최준규, 윤명한1 |
| 소속 | 아주대학교; 1광주과학기술원 |
| 논문초록 | This research focuses on the development of a high-performance quaternary Al–Hf–Zr–O (AHZO) dielectric film through a simplified sol-gel technique. Through a systematic adjustment of AlOx, HfOx, and ZrOx precursor ratios, the study fine-tunes the stoichiometry to optimize AHZO film dielectric characteristics. The resulting films demonstrate essential attributes for TFT operation, including a dielectric constant over 8.5, a robust breakdown field exceeding 5 MV/cm, and a minimal leakage current density below 10-5.5 A/cm2. Integration of the AHZO with a sol-gel-derived In–Ga–Zn–O (IGZO) active layer significantly improves device performance and reliability under bias stress, facilitated by the amorphous and exceptionally smooth nature of the AHZO layer. Electrical analysis confirms that AHZO/IGZO TFTs outperform those with conventional binary oxide dielectrics, underscoring the strategic significance of AHZO in advanced electronic applications. |
THE POLYMER SOCIETY OF KOREA